The Uncertainty of the Indirect Thermographic Measurement of the Temperature of the Semiconductor Element

Abstract

The indirect thermographic measurement of the temperature of a semiconductor element consists of two stages. The first involves a thermographic measurement of the case temperature of the semiconductor element. The second involves determining the relationship between the case temperature and the semiconductor element’s temperature. This is possible based on simulation studies using the finite element method (FEM). This type of measurement is subject to a certain level of uncertainty. The measurement uncertainty depends on a number of factors that affect the measurement result, as well as on the probability distributions assigned to them. As a result of the conducted research, the uncertainty value was determined. This uncertainty concerns the indirect thermographic measurement of the semiconductor element’s temperature.